Nuclear Technology Laboratory
Department of Electrical & Computer Engineering,
Aristotle University of Thessaloniki,
Macedonia, Greece.

Nuclear Technology Laboratory
Physical Review B : May 1, 1999 , Volume 59, Issue 17

Secondary electron emission near the electronic stopping power maximum.

R. Neugebauer, R. Wuensch, T. Jalowy, and K. O. Groeneveld ,H. Rothard , A. Clouvas, C. Potiriadis.

We report on measurements of light ion (Z = 2) and heavy ion (Z = 14) induced electron emission yields from the entrance and exit surfaces of thin carbon foils near the electronic energy loss per unit path length (dE/dx) maximum. At constant dE/dx, secondary electron yields are lower for high projectile velocities than for lower projectile velocities. This velocity effect, which is well known for secondary ion emission, is observed for backward electron emission for both He and Si. In the case of Si projectiles such a velocity effect is also observed for forward electron emission. The results can be qualitatively understood in the framework of recent electron transport and nuclear track models.

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